The Bias Tee TWBTXS provides both DC bias current and RF signal through a bias network.
Features include optimal frequency response; it is used in a microwave measurement area with an amplifier, programmable attenuator or switching circuit, etc.
Connectors | Pin Male | Female Pin | Box | Température | Dimensions |
Gold plated brass | Gold plated brass | Gold Plated Beryllium Copper | Aluminum, Anodic Oxidation | -40°C~+65°C | S:52×39.5×15.5 mm SC: 52×38×15.5 mm |
Ref. of the model | Frequency Band (GHz) | VSWR | Insertion Loss (dB) | Interface |
TWBT3S | 0.01-3 | 1.20 | 1.0 | RF IN SMA(J) RF+DC OUT SMA(K) DC IN SMA(K) |
TWBT4.2S | 0.01-4.2 | 1.25 | 1.25 | |
TWBT3SC | 0.01-3 | 1.20 | 1.0 | RF IN SMA(J) RF+DC OUT SMA(K) DC IN (Capacitance) |
TWBT4.2SC | 0.01-4.2 | 1.25 | 1.25 |
NOMINAL IMPEDANCE : 50 Ohms
RF POWER : 5W
BIAS VOLTAGE: 72V
CURRENT BIAS : 1.5A
Notes:
1. Dimensions Tolerance ±2%
The Bias Tee TWBT-X-N provides both DC bias current and RF signal through a bias network.
Features include optimum frequency response; it is used in microwave measurement area such as amplifier, programmable attenuator and switch circuit etc.
Connector | Pin Male | Female Pin | Box | Temperature | Dimensions |
Gold plated brass | Gold plated brass | Gold Plated Beryllium Copper | Aluminum, Anodic Oxidation | -40°C~+65°C | N:74×50×20mm NC:74×40×20mm |
Ref. of the model | Frequency band (GHz) | VSWR | Insertion Loss (dB) | Interface |
TWBT3N | 0.01-3 | 1.20 | 1.0 | RF IN SMA(J) RF+DC OUT SMA(K) DC IN SMA(K) |
TWBT4.2N | 0.01-4.2 | 1.25 | 1.25 | |
TWBT3NC | 0.01-3 | 1.20 | 1.0 | RF IN SMA(J) RF+DC OUT SMA(K) DC IN (Capacitance) |
TWBT4.2NC | 0.01-4.2 | 1.25 | 1.25 |
NOMINAL IMPEDANCE : 50 Ohms
RF POWER: 5W
BIAS VOLTAGE: 72V
CURRENT BIAS : 1.5A