Bias Tee



Model TWBTXS 0.01-4.2GHz5W

The Bias Tee TWBTXS provides both DC bias current and RF signal through a bias network.

Features include optimal frequency response; it is used in a microwave measurement area with an amplifier, programmable attenuator or switching circuit, etc.

 

 

MECHANICAL SPECIFICATIONS                

ConnectorsPin Male Female PinBoxTempératureDimensions
Gold plated brassGold plated brassGold Plated Beryllium CopperAluminum, Anodic Oxidation-40°C~+65°C

S:52×39.5×15.5 mm

SC: 52×38×15.5 mm

ELECTRICAL SPÉCIFICATIONS

Ref. of the modelFrequency Band (GHz)VSWRInsertion Loss (dB)Interface
TWBT3S0.01-31.201.0RF IN SMA(J)     RF+DC OUT SMA(K)     DC IN SMA(K)
TWBT4.2S0.01-4.21.251.25
TWBT3SC0.01-31.201.0RF IN SMA(J)     RF+DC OUT SMA(K)     DC IN (Capacitance)
TWBT4.2SC0.01-4.21.251.25

NOMINAL IMPEDANCE : 50 Ohms
RF POWER : 5W
BIAS VOLTAGE: 72V
CURRENT BIAS : 1.5A

Notes:
1. Dimensions Tolerance ±2%

Model TWBTXN 0.01-4.2GHz5W

The Bias Tee TWBT-X-N provides both DC bias current and RF signal through a bias network.

Features include optimum frequency response; it is used in microwave measurement area such as amplifier, programmable attenuator and switch circuit etc.

 

MECHANICAL SPECIFICATIONS  

ConnectorPin Male Female PinBoxTemperatureDimensions
Gold plated brassGold plated brassGold Plated Beryllium CopperAluminum, Anodic Oxidation-40°C~+65°C

N:74×50×20mm

NC:74×40×20mm

ELECTRICAL SPÉCIFICATIONS

Ref. of the modelFrequency band (GHz)VSWRInsertion Loss (dB)Interface
TWBT3N0.01-31.201.0RF IN SMA(J)     RF+DC OUT SMA(K)     DC IN SMA(K)
TWBT4.2N0.01-4.21.251.25
TWBT3NC0.01-31.201.0RF IN SMA(J)     RF+DC OUT SMA(K)     DC IN (Capacitance)
TWBT4.2NC0.01-4.21.251.25


NOMINAL IMPEDANCE : 50 Ohms
RF POWER: 5W
BIAS VOLTAGE: 72V
CURRENT BIAS : 1.5A




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